Results
Publications in journals

Monolithic tunable GaSb-based lasers at 3.3 µm

L. Naehle, C. Zimmermann, S. Belahsene, M. Fischer, G. Boissier, P. Grech, G. Narcy, S. Lundqvist, Y. Rouillard, J. Koeth, M. Kamp and L. Worschech
Electron. Lett. 47, 1092 (2011)
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Detection of acetylene impurities in ethylene and polyethylene manufacturing processes using tunable diode laser spectroscopy in the 3 µm range

P. Kluczynski, M. Jahjah, L. Nähle, O. Axner, S. Belahsene, M. Fischer, J. Koeth, Y. Rouillard, J. Westberg, A. Vicet, S. Lundqvist
Applied Physics B, DOI 10.1007/s00340-011-4645-6
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Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

G. Sêk, F. Janiak, M. Motyka, K. Ryczko, J. Misiewicz, A. Bauer, S. Höfling, A. Forchel
Optical Materials 28 July (2011)
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Above GaSb barrier states in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

M. Motyka, F. Janiak, K. Ryczko, G. Sêk, J. Misiewicz, A. Bauer, R. Weih, S. Höfling, M. Kamp, A. Forchel
Opto-Electronics Review 19, 137 (2011)
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Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 µm wavelength range around room temperature

L. Naehle, S. Belahsene, M.von. Edlinger, M. Fischer, G. Boissier, P. Grech, G. Narcy, A. Vicet, Y. Rouillard, J. Koeth and L. Worschech
Electronics Letters 47, 46 (2011)
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Mid-infrared semiconductor heterostructure lasers for gas sensing applications

A. Bauer, K. Rößner, T. Lehnhardt, M. Kamp, S. Höfling, L. Worschech, A. Forchel
Semicond. Sci. Technol. 26, 014032 (2011)
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Atomic scale interface engineering for strain compensated epitaxially grown InAs/AlSb superlattices

A. Bauer, M. Dallner, A. Herrmann, T. Lehnhardt, M. Kamp, S. Höfling, L. Worschech, A Forchel
Nanotechnology 21, 455603 (2010)
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Fast differential reflectance spectroscopy of semiconductor structures for infrared applications by using Fourier transform spectrometer

M. Motyka, J. Misiewicz
Applied Physics Express 3, 112401, (2010)
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Laser diodes for gas sensing emitting at 3.06 µm at room temperature

S. Belahsene, L. Nähle, M. Fischer, J. Koeth, G. Boissier, P. Grech, G. Narcy, A. Vicet, and Y. Rouillard
Photonics Technology Letters 22, 1084 (2010)
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Effect of annealing-induced interdiffusion on the electronic structure of mid infrared emitting GaInAsSb/AlGaInAsSb quantum wells

K. Ryczko, G. Sêk, M. Motyka, F. Janiak, J. Misiewicz, Belahsene, G. Boissier, Y. Rouillard
Japanese Journal of Applied Phyiscs 50, 031202 (2011)
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Shortened injector interband cascade lasers for 3.3- to 3.6-µm emission

A. Bauer, M. Dallner, M. Kamp, S. Höfling, L. Worschech, A. Forchel
Optical Engineering 49 111117 (2010)
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Mid infrared interband cascade lasers for sensing applications

L. Nähle, P. Fuchs, M. Fischer, J. Koeth, A. Bauer, M. Dallner, F. Langer, S. Höfling, A. Forchel
Appl. Phys. B 100, 275 (2010)
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Band offsets and photoluminescence thermal quenching in mid Infrared emitting GaInAsSb quantum wells with quinary AlGaInAsSb barriers

G. Sêk, M. Motyka, K. Ryczko, F. Janiak, J. Misiewicz, S. Belahsene, G. Boissier, Y. Rouillard
Jap. J. Appl. Phys. 49, 031202 (2010)
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Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

M. Motyka, G. Sek, K. Ryczko, J. Misiewicz, T. Lehnhardt, S. Höfling, and A. Forchel
Appl. Phys. Lett. 94, 251901 (2009)
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Optical transitions and band gap discontinuities of gainassb/algaassb quantum wells emitting in the 3 µm range determined by modulation spectroscopy

M. Motyka, G. Sêk, K. Ryczko, J. Misiewicz, S. Belahsene, G. Boissier, and Y. Rouillard
Journal of Applied Physics 106, 066104 (2009)
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Emission wavelength tuning of interband cascade lasers in the 3-4 µm spectral range

A. Bauer, F. Langer, M. Dallner, M. Kamp, M. Motyka, G. Sêk, K. Ryczko, J. Misiewicz, S. Höfling, A. Forchel
Appl. Phys. Lett. 95, 251103 (2009)
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Fourier transformed photoreflectance and photoluminescence of mid infrared GaSb-based type II quantum wells

M. Motyka, G. Sêk, J. Misiewicz, A. Bauer, M. Dallner, S. Höfling, A. Forchel
Appl. Phys. Express 2, 126505 (2009)
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Tunable-diode-laser spectroscopy of C2H2 using a 3.03 µm GaInAsSb/AlGaInAsSb distributed-feedback laser

P. Kluczynski, S. Lundqvist, S. Belahsene, Y. Rouillard
Optics Lett. 34, 3767 (2009)
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